oct . 20 1 5 . version 1. 3 magnachip semiconductor ltd . 1 m d d 15 0 3 C single n - channel trench mosfet 30v ? absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c i d 87.5 a t c = 70 o c 70 .0 t a =25 o c 28. 2 (3) t a = 70 o c 22.7 3) pulsed drain current i dm 350 a power dissipation t c =25 o c p d 59.5 w t c = 70 o c 38.0 t a =25 o c 6. 2 (3) t a = 70 o c 4.0 (3) single pulse avalanche energy (2) e as 146 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 20.0 o c/w thermal resistance, junction - to - case r jc 2.1 mdd150 3 single n - channel tre nch mosfet 30v, 87 .5 a, 4 .7 m features ? v ds = 30v ? i d = 87 .5 a @v gs = 10v ? r ds(on) (max) < 4 .7 m @v gs = 10v < 6 . 8 m @v gs = 4.5v ? 100% uil tested ? 100% rg tested general description the mdd150 3 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality . mdd150 3 is suitable device for dc to dc converter and general purpose applications. d g s
oct . 20 1 5 . version 1. 3 magnachip semiconductor ltd . 2 m d d 15 0 3 C single n - channel trench mosfet 30v ordering information part number temp. range package packing quantity rohs status mdd 15 0 3 rh - 55~1 50 o c d - pak tape & reel 3000 units halogen free electrical characteristics (t j =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 .3 1.9 2.7 drain cut - off current i dss v ds = 30 v, v gs = 0v - - 1 a t j = 55 o c - - 5 gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 22 a - 4.1 4.7 m t j = 125 o c - 5.9 6.8 v gs = 4.5v, i d = 18 a - 5.7 6.8 forward tr ansconductance g fs v ds = 5v, i d = 10a - 27 - s dynamic characteristics total gate charge q g(10v) v ds = 1 5.0 v, i d = 22 a, v gs = 10v 21 28 35 nc total gate charge q g(4.5v) 10 13.3 16.6 gate - source charge q gs - 5.9 - gate - drain charge q gd - 4.2 - input capacitance c iss v ds = 1 5.0 v, v gs = 0v, f = 1.0mhz 1349 1799 2249 pf reverse transfer capacitance c rss 132 17 7 221 output capacitance c oss 266 354 443 turn - on delay time t d(on) v gs = 10v, v ds = 15.0 v, i d = 22 a , r g = 3.0 - 12 - ns rise time t r - 12.7 - turn - off delay time t d(off) - 30.6 - fall time t f - 9.2 - gate resistance rg f=1 mhz - 1.2 2.0 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 22 a, v gs = 0v - 0 .8 4 1.1 v body diode reverse recovery time t rr i f = 22 a, dl/dt = 100a/s - 27.1 40.7 ns body diode reverse recovery charge q rr - 20.6 30.9 nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) 2. e as is tested at starting tj = 25 , l = 0 . 1 mh, i as = 30 .0 a, v dd = 27v, v gs = 10v. 3. t < 10sec.
oct . 20 1 5 . version 1. 3 magnachip semiconductor ltd . 3 m d d 15 0 3 C single n - channel trench mosfet 30v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 8.0v 4.5v 3.5v v gs = 10v 5.0v 4.0v 3.0v i d , drain current [a] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 3 6 9 12 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes : 1. v gs = 10 v 2. i d = 22.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 notes : i d = 22.0a t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0 1 2 3 4 5 0 4 8 12 16 20 v gs , gate-source voltage [v] t a =25 notes : v ds = 5v i d , drain current [a] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 0 10 1 t a =25 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v]
oct . 20 1 5 . version 1. 3 magnachip semiconductor ltd . 4 m d d 15 0 3 C single n - channel trench mosfet 30v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s . case temperature fig.11 transient thermal response curve 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 i d , drain current [a] t a , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc , thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 v ds = 22v note : i d = 13a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 us 1 ms 100 us dc 10 us 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v]
oct . 20 1 5 . version 1. 3 magnachip semiconductor ltd . 5 m d d 15 0 3 C single n - channel trench mosfet 30v package dimension d - pak (to - 252) d imensions are in millimeters, unless otherwise specified
oct . 20 1 5 . version 1. 3 magnachip semiconductor ltd . 6 m d d 15 0 3 C single n - channel trench mosfet 30v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or syste ms in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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